PART |
Description |
Maker |
JANSF2N5153U3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
JANSM2N3057A |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
MRF5812 MRF5812G |
Bipolar Junction Transistor
|
Advanced Power Technology
|
2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3 TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五(巴西)总裁| 7A条一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五(巴西)总裁| 100mA的一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五(巴西)总裁|5A一(c)|6 TRANSISTOR | BJT | PNP | 15A I(C) | TO-36 TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V. Microsemi, Corp.
|
2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
2N1493 2N1410 2N335 2N337 2N333 2N2537 2N3510 2N36 |
5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 20MA I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 500MA I(C) | TO-52 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-72 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 100MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 300MA I(C) | TO-5
|
Weidmuller, Corp.
|
2DB1697 2DB1697-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
ZXT10P20DE6TA ZXT10P20DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|